The CES Innovation Award for the year 2018 goes to Samsung GDDR6 K4ZAF325BM-HC14 Memory

The CES innovation award is always chosen for the best of what’s being manufactured and this time, the Samsung 16GB GDDR6 Memory was able to impress the judges. The Samsung GDDR6 K4ZAF325BM-HC14 is the company’s first ever GDDR6 module and it operates at 1.35V. CES even awarded the chip before its full n final release as the product is still in the phase of development.

The Event

The award hasn’t been officially handed over to Samsung and we’ll have to wait till the formal commencement of the function which is planned next year in January. Other big names including Nvidia are also fully prepared for the said dates but what we are interested in, is the GDDR5 memory itself.

Samsung GDDR6 K4ZAF325BM-HC14 Memory

Here are some of the features of this GDDR6 memory:

  • Ability to process images and video at 16Gbps with 64GB/s data I/O bandwidth
  • This speed is equivalent to transferring approximately 12 full-HD DVDs (5GB equivalent) per second
  • Operational voltage of 1.35 volts

All this and much more have made this memory win the award and surely, we all are looking forward to the ceremony.

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